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SI3863BDV

更新时间: 2024-11-01 06:11:35
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威世 - VISHAY 开关
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描述
Load Switch with Level-Shift

SI3863BDV 数据手册

  
Specification Comparison  
Vishay Siliconix  
Si3863BDV vs. Si3863DV  
Description: Load Switch with Level-Shift  
Package:  
Pin Out:  
TSOP-6  
Identical  
Part Number Replacements:  
Si3863BDV-T1-E3 Replaces Si3863DV-T1-E3  
Si3863BDV-T1-E3 Replaces Si3863DV-T1  
Summary of Performance:  
The Si3863BDV is an upgrade to the original Si3863DV; both parts perform identically, including limits to the parametric tables  
below.  
ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VIN  
Si3863BDV  
Si3863DV  
Unit  
Input Voltage  
12  
12  
V
ON/OFF Voltage  
8
8
VON/OFF  
Continuous  
Pulsed  
+2.5  
+5  
+2.5  
+5  
Load Current  
IL  
A
Continuous Intrinsic Diode Conduction  
Power Dissipation  
Operating Junction & Storage Temperature Range  
Maximum Junction-to-Ambient  
-1  
0.83  
-1  
0.83  
IS  
PD  
W
°C  
-55 to 150  
150  
-55 to 150  
150  
Tj & Tstg  
RthJA  
°C/W  
SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)  
Si3863BDV  
Si3863DV  
Typ  
Parameter  
Symbol  
Unit  
Min  
Typ  
Max  
Min  
Max  
OFF Characteristic  
Reverse Leakage Current  
Diode Forward Voltage  
1
1
uA  
V
IFL  
-0.75  
-1  
-0.75  
-1  
VSD  
Dynamic  
Input Voltage Range  
VIN  
2.5  
12  
2.5  
12  
nC  
0.057  
0.082  
0.110  
0.075  
0.086  
0.105  
0.135  
0.105  
VIN = 4.5 V  
VIN = 3.0 V  
0.105  
0.140  
0.125  
0.165  
On-Resistance (p-channel) @ 1A  
On-State (p-channel) Drain-Current  
rDS(on)  
VIN = 2.5 V  
A
1
1
1
1
VIN = 10 V  
VIN = 5 V  
ID(on)  
A
Document Number 74118  
27-May-05  
www.vishay.com  

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