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SI3861DV PDF预览

SI3861DV

更新时间: 2024-11-24 22:05:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 外围驱动器驱动程序和接口开关接口集成电路光电二极管
页数 文件大小 规格书
4页 121K
描述
Integrated Load Switch

SI3861DV 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SOT-6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.34Is Samacsys:N
内置保护:TRANSIENT驱动器位数:1
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G6
JESD-609代码:e0长度:2.9 mm
湿度敏感等级:1标称负供电电压:-8 V
功能数量:1端子数量:6
输出电流流向:SOURCE最大输出电流:2.8 A
标称输出峰值电流:9 A封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
电源:+-8 V认证状态:Not Qualified
座面最大高度:1.22 mm子类别:Peripheral Drivers
最大供电电压:8 V最小供电电压:2.5 V
标称供电电压:8 V表面贴装:YES
技术:MOS端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL宽度:1.6 mm
Base Number Matches:1

SI3861DV 数据手册

 浏览型号SI3861DV的Datasheet PDF文件第2页浏览型号SI3861DV的Datasheet PDF文件第3页浏览型号SI3861DV的Datasheet PDF文件第4页 
August 2001  
Si3861DV  
Integrated Load Switch  
Features  
General Description  
–2.8 A, –8 V. RDS(ON) = 55 m@ VGS = –4.5 V  
This device is particularly suited for compact power  
management in portable electronic equipment where  
2.5V to 8V input and 2.8A output current capability are  
needed. This load switch integrates a small N-Channel  
power MOSFET (Q1) that drives a large P-Channel  
power MOSFET (Q2) in one tiny SuperSOTTM-6  
package.  
R
R
DS(ON) = 70 m@ VGS = –2.5 V  
DS(ON) = 100 m@ VGS = –1.8 V  
Control MOSFET (Q1) includes Zener protection for  
ESD ruggedness (>6KV Human body model)  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
Load switch  
Power management  
Equivalent Circuit  
Q2  
Vin,R1  
4
Vout,C1  
3
IN  
OUT  
+
V
DROP  
ON/OFF  
Vout,C1  
R2  
5
2
1
Q1  
G
R1,C1  
6
ON/OFF  
Pin 1  
See Application Circuit  
SuperSOT™-6  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VIN  
Maximum Input Voltage  
V
V
A
8
VON/OFF  
ILoad  
High level ON/OFF voltage range  
Load Current – Continuous  
– Pulsed  
–0.5 to 8  
–2.8  
(Note 1)  
(Note 1)  
–9  
0.7  
Maximum Power Dissipation  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1)  
180  
60  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
8mm  
Quantity  
3000 units  
.861  
Si3861DV  
7’’  
Si3861DV Rev B(W)  
2001 Fairchild Semiconductor Corporation  

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R-C Thermal Model Parameters