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SI3853DV-E3 PDF预览

SI3853DV-E3

更新时间: 2024-11-21 21:20:35
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
7页 96K
描述
TRANSISTOR 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal

SI3853DV-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.38配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):1.6 A
最大漏极电流 (ID):1.6 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SI3853DV-E3 数据手册

 浏览型号SI3853DV-E3的Datasheet PDF文件第2页浏览型号SI3853DV-E3的Datasheet PDF文件第3页浏览型号SI3853DV-E3的Datasheet PDF文件第4页浏览型号SI3853DV-E3的Datasheet PDF文件第5页浏览型号SI3853DV-E3的Datasheet PDF文件第6页浏览型号SI3853DV-E3的Datasheet PDF文件第7页 
Si3853DV  
Vishay Siliconix  
New Product  
P-Channel 20-V (D-S) MOSFET With Schottky Diode  
MOSFET PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.200 @ V = –4.5 V  
"1.8  
"1.3  
GS  
–20  
0.340 @ V = –2.5 V  
GS  
SCHOTTKY PRODUCT SUMMARY  
Vf (v)  
VKA (V)  
IF (A)  
Diode Forward Voltage  
20  
0.48 V @ 0.5 A  
0.5  
S
K
TSOP-6  
Top View  
A
S
K
1
2
3
6
5
G
3 mm  
N/C  
D
G
4
2.85 mm  
D
A
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 sec  
Steady State  
Unit  
Drain-Source Voltage (MOSFET and Schottky)  
Reverse Voltage (Schottky)  
V
–20  
20  
DS  
KA  
V
V
Gate-Source Voltage (MOSFET)  
V
GS  
"12  
"12  
T
= 25_C  
= 70_C  
"1.6  
"1.2  
"1.8  
"1.5  
A
a
Continuous Drain Current (T = 150_C) (MOSFET)  
I
J
D
T
A
Pulsed Drain Current (MOSFET)  
I
I
"7  
DM  
A
a
Continuous Source Current (MOSFET Diode Conduction)  
Average Foward Current (Schottky)  
I
–1.05  
–0.75  
S
I
0.5  
7
F
Pulsed Foward Current (Schottky)  
FM  
T
= 25_C  
= 70_C  
= 25_C  
= 70_C  
1.15  
0.73  
1.0  
0.83  
0.53  
0.76  
0.48  
A
a
Maximum Power Dissipation (MOSFET)  
T
A
P
W
D
T
A
a
Maximum Power Dissipation (Schottky)  
T
A
0.64  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
Notes  
a. Surface Mounted on 1” x1” FR4 Board.  
Document Number: 70979  
S-61846—Rev. A, 04-Oct-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  

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