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SI3861

更新时间: 2024-09-12 22:05:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 121K
描述
Integrated Load Switch

SI3861 数据手册

 浏览型号SI3861的Datasheet PDF文件第2页浏览型号SI3861的Datasheet PDF文件第3页浏览型号SI3861的Datasheet PDF文件第4页 
August 2001  
Si3861DV  
Integrated Load Switch  
Features  
General Description  
–2.8 A, –8 V. RDS(ON) = 55 m@ VGS = –4.5 V  
This device is particularly suited for compact power  
management in portable electronic equipment where  
2.5V to 8V input and 2.8A output current capability are  
needed. This load switch integrates a small N-Channel  
power MOSFET (Q1) that drives a large P-Channel  
power MOSFET (Q2) in one tiny SuperSOTTM-6  
package.  
R
R
DS(ON) = 70 m@ VGS = –2.5 V  
DS(ON) = 100 m@ VGS = –1.8 V  
Control MOSFET (Q1) includes Zener protection for  
ESD ruggedness (>6KV Human body model)  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
Load switch  
Power management  
Equivalent Circuit  
Q2  
Vin,R1  
4
Vout,C1  
3
IN  
OUT  
+
V
DROP  
ON/OFF  
Vout,C1  
R2  
5
2
1
Q1  
G
R1,C1  
6
ON/OFF  
Pin 1  
See Application Circuit  
SuperSOT™-6  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VIN  
Maximum Input Voltage  
V
V
A
8
VON/OFF  
ILoad  
High level ON/OFF voltage range  
Load Current – Continuous  
– Pulsed  
–0.5 to 8  
–2.8  
(Note 1)  
(Note 1)  
–9  
0.7  
Maximum Power Dissipation  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1)  
180  
60  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
8mm  
Quantity  
3000 units  
.861  
Si3861DV  
7’’  
Si3861DV Rev B(W)  
2001 Fairchild Semiconductor Corporation  

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