5秒后页面跳转
SI3801DV PDF预览

SI3801DV

更新时间: 2024-09-27 15:51:11
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 89K
描述
Power Field-Effect Transistor, 2.3A I(D), 0.22ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6

SI3801DV 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.34
Is Samacsys:N配置:COMPLEX
最大漏极电流 (ID):2.3 A最大漏源导通电阻:0.22 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI3801DV 数据手册

 浏览型号SI3801DV的Datasheet PDF文件第2页浏览型号SI3801DV的Datasheet PDF文件第3页浏览型号SI3801DV的Datasheet PDF文件第4页浏览型号SI3801DV的Datasheet PDF文件第5页浏览型号SI3801DV的Datasheet PDF文件第6页 
Si3801DV  
Vishay Siliconix  
Bi-Directional P-Channel MOSFET/Battery Switch  
PRODUCT SUMMARY  
VSS (V)  
rSS(on) (W)  
IS (A)  
0.220 @ V = –4.5 V  
"2.3  
"1.7  
GS  
–12  
0.400 @ V = –2.5 V  
GS  
FEATURES  
D Low rSS(on) Symmetrical P-Channel MOSFET  
D Rated for 2.5- to 12-V Operation  
D Solution for High-Side Battery Disconnect Switching (BDS)  
D Supports Multiple Battery Applications  
D Symmetrical 12-V Blocking (off) Voltage  
D Low Profile, Small Footprint TSOP-6 Package  
DESCRIPTION  
The Si3801DV is a low on-resistance p-channel power  
MOSFET providing 12-V bi-directional blocking and  
low-resistance bi-directional conduction. The Si3801DV was  
realized by integrating two rugged, p-channel, high density  
Trench process, vertical MOSFETs in a common drain area.  
This yields exactly the same “reverse blocking” results as  
externally connecting the drains of a dual MOSFET, but  
without the wasted separation between two die and the area  
lost to drain connections that can be avoided by connecting  
them internally. Additional space is saved by tying the two  
gates common. This allows the Si3801DV to replace a larger  
dual MOSFET package with a single smaller footprint, lower  
profile, TSOP-6 package.  
APPLICATION CIRCUITS  
AC/DC  
Adapter  
Charger  
Loads  
DC/DC  
Si3801DV  
Si3801DV  
Si3801DV  
Charger  
Si3801DV  
FIGURE 5. Charger Demultiplexing  
FIGURE 6. Battery Multiplexing (High-Side Switch)  
Document Number: 70834  
S-59628—Rev. A, 09-Nov-98  
www.vishay.com S FaxBack 408-970-5600  
2-1  

与SI3801DV相关器件

型号 品牌 获取价格 描述 数据表
SI3805DV VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET with Schottky Diode
SI3805DV-T1-E3 VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET with Schottky Diode
SI3805DV-T1-GE3 VISHAY

获取价格

P-CH TSOP-6 20V 108MOHM @ 4.5V W/ 0.5A SCHOTTKY DIODE - Tape and Reel
SI3812DV VISHAY

获取价格

N-Channel 20-V (D-S) MOSFET With Schottky Diode
SI3812DV_08 VISHAY

获取价格

N-Channel 20-V (D-S) MOSFET With Schottky Diode
SI3812DV-T1 VISHAY

获取价格

N-Channel 20-V (D-S) MOSFET With Schottky Diode
SI3812DV-T1-E3 VISHAY

获取价格

MOSFET N-CH 20V 2A 6-TSOP
SI3831DV VISHAY

获取价格

Bi-Directional P-Channel MOSFET/Power Switch
SI3831DV-E3 VISHAY

获取价格

IC 8 A BUF OR INV BASED PRPHL DRVR, PDSO6, TSOP-6, Peripheral Driver
SI3831DV-T1 VISHAY

获取价格

Buffer/Inverter Based Peripheral Driver, 8A, PDSO6, TSOP-6