是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | TSOP | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.34 |
Is Samacsys: | N | 配置: | COMPLEX |
最大漏极电流 (ID): | 2.3 A | 最大漏源导通电阻: | 0.22 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3805DV | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET with Schottky Diode | |
SI3805DV-T1-E3 | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET with Schottky Diode | |
SI3805DV-T1-GE3 | VISHAY |
获取价格 |
P-CH TSOP-6 20V 108MOHM @ 4.5V W/ 0.5A SCHOTTKY DIODE - Tape and Reel | |
SI3812DV | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV_08 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV-T1 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV-T1-E3 | VISHAY |
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MOSFET N-CH 20V 2A 6-TSOP | |
SI3831DV | VISHAY |
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Bi-Directional P-Channel MOSFET/Power Switch | |
SI3831DV-E3 | VISHAY |
获取价格 |
IC 8 A BUF OR INV BASED PRPHL DRVR, PDSO6, TSOP-6, Peripheral Driver | |
SI3831DV-T1 | VISHAY |
获取价格 |
Buffer/Inverter Based Peripheral Driver, 8A, PDSO6, TSOP-6 |