SI3812DV-T1

更新时间： 2024-09-27 07:03:51

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
7页	112K
描述
N-Channel 20-V (D-S) MOSFET With Schottky Diode

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中文翻译

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数据手册

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SI3812DV-T1 数据手册

Si3812DV

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET With Schottky Diode

FEATURES

MOSFET PRODUCT SUMMARY

D LITTLE FOOT Plust

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)

0.125 @ V = 4.5 V

2.4

1.8

0.200 @ V = 2.5 V

SCHOTTKY PRODUCT SUMMARY

V_f(V)

V_KA(V)

I_F(A)

Diode Forward Voltage

0.48 V @ 0.5 A

0.5

TSOP-6

Top View

3 mm

N/C

2.85 mm

Ordering Information: Si3812DV-T1

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

"12

= 25_C

= 85_C

2.0

1.4

2.4

1.7

Continuous Drain Current (T = 150_C) (MOSFET)

Pulsed Drain Current (MOSFET)

Continuous Source Current (MOSFET Diode Conduction)

Average Foward Current (Schottky)

1.05

0.5

0.75

0.5

Pulsed Foward Current (Schottky)

= 25_C

= 85_C

= 25_C

= 85_C

1.15

0.59

1.0

0.83

0.53

0.76

0.48

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

0.52

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71069

S-31725—Rev. E, 18-Aug-03

www.vishay.com

12 3 4 5 6 7

中文翻译

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