Datasheet > SI3851DV_08

SI3851DV_08

更新时间： 2024-09-27 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
7页	101K
描述
P-Channel 30-V (D-S) MOSFET With Schottky Diode

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SI3851DV_08 数据手册

Si3851DV

Vishay Siliconix

New Product

P-Channel 30-V (D-S) MOSFET With Schottky Diode

MOSFET PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.200 @ V = –10 V

"1.8

"1.2

–30

0.360 @ V = –4.5 V

SCHOTTKY PRODUCT SUMMARY

V_f(v)

V_KA(V)

I_F(A)

Diode Forward Voltage

0.5 V @ 0.5 A

0.5

TSOP-6

Top View

3 mm

N/C

2.85 mm

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage (MOSFET and Schottky)

Reverse Voltage (Schottky)

–30

Gate-Source Voltage (MOSFET)

"20

= 25_C

= 70_C

"1.6

"1.2

"1.8

"1.5

Continuous Drain Current (T = 150_C) (MOSFET)

Pulsed Drain Current (MOSFET)

Continuous Source Current (MOSFET Diode Conduction)

Average Foward Current (Schottky)

–1.05

–0.75

0.5

Pulsed Foward Current (Schottky)

= 25_C

= 70_C

= 25_C

= 70_C

1.15

0.73

1.0

0.83

0.53

0.76

0.48

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

0.64

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 70978

S-61845—Rev. A, 11-Oct-99

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5 6 7

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