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SI3851DV-T1-E3 PDF预览

SI3851DV-T1-E3

更新时间: 2024-09-27 20:06:15
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
7页 117K
描述
Trans MOSFET P-CH 30V 1.6A 6-Pin TSOP T/R

SI3851DV-T1-E3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.45
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):1.6 A最大漏极电流 (ID):1.6 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.83 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

SI3851DV-T1-E3 数据手册

 浏览型号SI3851DV-T1-E3的Datasheet PDF文件第2页浏览型号SI3851DV-T1-E3的Datasheet PDF文件第3页浏览型号SI3851DV-T1-E3的Datasheet PDF文件第4页浏览型号SI3851DV-T1-E3的Datasheet PDF文件第5页浏览型号SI3851DV-T1-E3的Datasheet PDF文件第6页浏览型号SI3851DV-T1-E3的Datasheet PDF文件第7页 
Si3851DV  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET with Schottky Diode  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
LITTLE FOOT® Plus  
VDS (V)  
RDS(on) (Ω)  
I
D (A)  
1.8  
0.200 at VGS = - 10 V  
0.360 at VGS = - 4.5 V  
- 30  
Compliant to RoHS Directive 2002/95/EC  
1.2  
SCHOTTKY PRODUCT SUMMARY  
VF (V)  
Diode Forward Voltage  
VKA (V)  
IF (A)  
30  
0.5 V at 0.5 A  
0.5  
TSOP-6  
Top View  
S
K
A
S
K
1
2
3
6
5
3 mm  
N/C  
D
G
G
4
2.85 mm  
D
A
Ordering Information: Si3851DV-T1-E3 (Lead (Pb)-free)  
Si3851DV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage (MOSFET and Schottky)  
Reverse Voltage (Schottky)  
Gate-Source Voltage (MOSFET)  
- 30  
30  
VKA  
VGS  
V
20  
20  
1.6  
1.2  
TA = 25 °C  
A = 70 °C  
1.8  
1.5  
Continuous Drain Current (TJ = 150 °C) (MOSFET)a  
ID  
T
IDM  
IS  
Pulsed Drain Current (MOSFET)  
7
A
Continuous Source Current (MOSFET Diode Conduction)a  
Average Forward Current (Schottky)  
- 1.05  
- 0.75  
IF  
0.5  
7
IFM  
Pulsed Foward Current (Schottky)  
TA = 25 °C  
1.15  
0.73  
1.0  
0.83  
0.53  
0.76  
0.48  
Maximum Power Dissipation (MOSFET)a  
TA = 70 °C  
TA = 25 °C  
PD  
W
Maximum Power Dissipation (Schottky)a  
T
A = 70 °C  
0.64  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
Document Number: 70978  
S09-2275-Rev. B, 02-Nov-09  
www.vishay.com  
1

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