Datasheet > SI3831DV

SI3831DV

更新时间： 2024-09-26 22:38:31

品牌	Logo	应用领域
威世 - VISHAY		开关电源开关
页数	文件大小	规格书
6页	65K
描述
Bi-Directional P-Channel MOSFET/Power Switch

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SI3831DV 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	零件包装代码：	TSOP
包装说明：	,	针数：	6
Reach Compliance Code：	unknown	风险等级：	5.06
配置：	Single	最大漏极电流 (Abs) (ID)：	2.4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.5 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI3831DV 数据手册

Si3831DV

Vishay Siliconix

Bi-Directional P-Channel MOSFET/Power Switch

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.170 @ V = –4.5 V

"2.4

"2.0

0.240 @ V = –2.5 V

FEATURES

D Low r_DS(on)Symmetrical P-Channel MOSFET

D Integrated Body Bias For Bi-Directional Blocking

D 2.5- to 5.5-V Operation

D Solution for High-Side Battery Disconnect Switching (BDS)

D Supports Battery Switching in Multiple Battery Cell

Phones, PDAs and PCS Products

D Low Profile, Small Footprint TSOP-6 Package

D Exceeds "2 kV ESD Protected

DESCRIPTION

The Si3831DV is a low on-resistance p-channel power

MOSFET providing bi-directional blocking and conduction.

Bi-directional blocking is facilitated by combining a 4-terminal

symmetric p-channel MOSFET with a body bias selector

circuit*. Circuit operation automatically biases the p-channel

body to the most positive source/drain potential thereby

maintaining a reverse bias across the diode present between

characteristics are symmetric, facilitating bi-directional

blocking for high-side battery switching in portable products.

Gate drive is facilitated by negatively biasing the gate relative

to the body potential. The off-state is achieved by biasing the

gate to the most positive supply voltage or to the body

potential. The Si3831DV is available in a 6-pin TSOP-6

package rated for the –25 to 85°C commercial temperature

range.

the source/drain terminals.

Off-state device blocking

APPLICATION CIRCUITS

AC/DC

Adapter

Body

Bias

Charger

Body

Bias

Loads

Si3831DV

DC/DC

Si3831DV

Body

Bias

Body

Bias

Si3831DV

Charger

FIGURE 2. Battery Multiplexing (High-Side Switch)

FIGURE 1. Charger Demultiplexing

*Patents pending.

Document Number: 70785

S-56947—Rev. C, 28-Dec-98

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5 6

中文翻译

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与SI3831DV相关器件

型号	品牌	获取价格	描述	数据表
SI3831DV-E3	VISHAY	获取价格	IC 8 A BUF OR INV BASED PRPHL DRVR, PDSO6, TSOP-6, Peripheral Driver
SI3831DV-T1	VISHAY	获取价格	Buffer/Inverter Based Peripheral Driver, 8A, PDSO6, TSOP-6
SI3831DV-T1-GE3	VISHAY	获取价格	IC PWR SW BI-DIR PCHAN 6TSOP
SI3850ADV	VISHAY	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
SI3850ADV_08	VISHAY	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
SI3850ADV_09	VISHAY	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
SI3850ADV-T1-E3	VISHAY	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
SI3850ADV-T1-GE3	VISHAY	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
SI3850DV	VISHAY	获取价格	Complementary MOSFET Half-Bridge (N- and P-Channel)
SI3850DV-T1	VISHAY	获取价格	Transistor

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