SI3850DV

更新时间： 2024-09-26 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	76K
描述
Complementary MOSFET Half-Bridge (N- and P-Channel)

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SI3850DV 数据手册

Si3850DV

Vishay Siliconix

Complementary MOSFET Half-Bridge (N- and P-Channel)

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.500 @ V = 4.5 V

"1.2

"1.0

N-Channel

P-Channel

0.750 @ V = 3.0 V

1.00 @ V = –4.5 V

"0.85

"0.75

–20

1.30 @ V = –3.0 V

TSOP-6

Top View

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

"1.2

"0.95

"3.5

–20

"12

"0.85

"0.65

"2.5

–1

= 25_C

= 70_C

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

= 25_C

= 70_C

1.25

0.8

Maximum Power Dissipation

(Surface Mounted on FR4 Board)

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P- Channel

Unit

Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)

thJA

100

_C/W

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70778

S-55457—Rev. B, 09-Mar-98

www.vishay.com S FaxBack 408-970-5600

2-1

12 3 4 5 6

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