Datasheet > SI3850DV-T1

SI3850DV-T1

更新时间： 2024-09-27 21:19:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	109K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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SI3850DV-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.83	Base Number Matches：	1

SI3850DV-T1 数据手册

Si3850DV

Vishay Siliconix

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES

PRODUCT SUMMARY

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)

0.500 @ V = 4.5 V

1.2

N-Channel

P-Channel

0.750 @ V = 3.0 V

1.0

1.00 @ V = −4.5 V

−0.85

−0.75

−20

1.30 @ V = −3.0 V

TSOP-6

Top View

Ordering Information: Si3850DV-T1

Si3850DV-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"12

= 25_C

= 70_C

1.2

0.95

3.5

−0.85

−0.65

−2.5

−1

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

= 25_C

= 70_C

1.25

0.8

Maximum Power Dissipation

(Surface Mounted on FR4 Board)

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P- Channel

Unit

Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)

thJA

100

_C/W

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70778

S-50132—Rev. D, 24-Jan-05

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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