Datasheet > SI3850ADV_08

SI3850ADV_08

更新时间： 2024-09-27 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	128K
描述
Complementary MOSFET Half-Bridge (N- and P-Channel)

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数据手册

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SI3850ADV_08 数据手册

Si3850ADV

Vishay Siliconix

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES

100 % R_gTested

PRODUCT SUMMARY

•

V_DS(V)

r_DS(on)(Ω)

I_D(A)

1.4

0.300 at V_GS= 4.5 V

0.410 at V_GS= 3.0 V

0.640 at V_GS= - 4.5 V

0.980 at V_GS= - 3.0 V

RoHS

N-Channel

P-Channel

1.2

COMPLIANT

- 0.96

- 0.78

- 20

TSOP-6

Top View

Ordering Information:

Si3850ADV-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 20

V_GS

T_A= 25 °C

T_A= 70 °C

1.4

1.1

3.5

0.9

- 0.96

- 0.77

- 2.0

I_D

Continuous Drain Current (T_J= 150 °C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

I_DM

I_S

- 0.9

Maximum Power Dissipation

(Surface Mounted on FR4 Board)

_A= 25 °C

_A= 70 °C

1.08

0.70

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

N- or P-Channel

Symbol

Unit

Maximum Junction-to-Ambient (Sourface Mounted on FR4 Board,

≤ 10 sec)

R_thJA

°C/W

115

Notes:

Maximum under Steady State condition is 150 °C/W.

Document Number: 73789

S-60470-Rev. A, 27-Mar-06

www.vishay.com

12 3 4 5 6 7...9

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