是否无铅: | 不含铅 | 生命周期: | Obsolete |
零件包装代码: | TSOP | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 3.3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 0.084 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.4 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3812DV | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV_08 | VISHAY |
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N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV-T1 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV-T1-E3 | VISHAY |
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MOSFET N-CH 20V 2A 6-TSOP | |
SI3831DV | VISHAY |
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Bi-Directional P-Channel MOSFET/Power Switch | |
SI3831DV-E3 | VISHAY |
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IC 8 A BUF OR INV BASED PRPHL DRVR, PDSO6, TSOP-6, Peripheral Driver | |
SI3831DV-T1 | VISHAY |
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Buffer/Inverter Based Peripheral Driver, 8A, PDSO6, TSOP-6 | |
SI3831DV-T1-GE3 | VISHAY |
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IC PWR SW BI-DIR PCHAN 6TSOP | |
SI3850ADV | VISHAY |
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Complementary MOSFET Half-Bridge (N- and P-Channel) | |
SI3850ADV_08 | VISHAY |
获取价格 |
Complementary MOSFET Half-Bridge (N- and P-Channel) |