SI3433CDV

更新时间： 2024-11-06 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	121K
描述
P-Channel 20-V (D-S) MOSFET

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中文翻译

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SI3433CDV 数据手册

New Product

Si3433CDV

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

- 6

0.038 at V_GS= - 4.5 V

0.046 at V_GS= - 2.5 V

0.060 at V_GS= - 1.8 V

APPLICATIONS

RoHS

COMPLIANT

•

Load Switch

- 20

- 6

18 nC

•

Notebook

- 6

TSOP-6

Top View

(4) S

3 mm

(3) G

Marking Code

AX XXX

Lot Traceability

and Date Code

Part # Code

2.85 mm

(1, 2, 5, 6) D

Ordering Information: Si3433CDV-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

- 20

8.0

Unit

V_GS

- 6.0^a

- 5.2^{b, c}

- 4.2^{b, c}

- 20

T_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

- 2.7

- 1.3^{b, c}

3.3

Continuous Source-Drain Diode Current

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

2.1

P_D

Maximum Power Dissipation

1.6^{b, c}

1.0^{b, c}

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

t ≤ 5 s

Steady State

°C/W

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 68803

S-81950-Rev. A, 25-Aug-08

www.vishay.com

12 3 4 5 6 7

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