生命周期: | Obsolete | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 8.38 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (ID): | 0.0027 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI1417DH-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 0.0027A I(D), 12V, 1-Element, P-Channel, Silicon, Me | |
SI1417EDH | VISHAY |
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P-Channel 12-V (D-S) MOSFET | |
SI1417EDH_08 | VISHAY |
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P-Channel 12-V (D-S) MOSFET | |
SI1417EDH-E3 | VISHAY |
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TRANSISTOR 2700 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN, FET General P | |
SI1417EDH-T1 | VISHAY |
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Transistor, | |
SI1419DH | VISHAY |
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P-Channel 200-V (D-S) MOSFET | |
SI1419DH_08 | VISHAY |
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P-Channel 200-V (D-S) MOSFET | |
SI1419DH-T1-E3 | VISHAY |
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P-Channel 200-V (D-S) MOSFET | |
SI1419DH-T1-GE3 | VISHAY |
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TRANSISTOR 300 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
SI1422DH | VISHAY |
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N-Channel 12 V (D-S) MOSFET |