5秒后页面跳转
SI1417DH-T1 PDF预览

SI1417DH-T1

更新时间: 2024-09-11 21:06:03
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
6页 76K
描述
Small Signal Field-Effect Transistor, 0.0027A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

SI1417DH-T1 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:8.38配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (ID):0.0027 A
最大漏源导通电阻:0.085 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI1417DH-T1 数据手册

 浏览型号SI1417DH-T1的Datasheet PDF文件第2页浏览型号SI1417DH-T1的Datasheet PDF文件第3页浏览型号SI1417DH-T1的Datasheet PDF文件第4页浏览型号SI1417DH-T1的Datasheet PDF文件第5页浏览型号SI1417DH-T1的Datasheet PDF文件第6页 
New Product  
Si1417DH  
Vishay Siliconix  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETS: 1.8 V Rated  
VDS (V)  
rDS(on) (Ω)  
ID (A)  
- 3.3  
- 2.9  
- 2.4  
Pb-free  
Thermally Enhanced SC-70 Package  
0.085 at VGS = - 4.5 V  
0.115 at VGS = - 2.5 V  
0.160 at VGS = - 1.8 V  
Available  
- 12  
RoHS*  
APPLICATIONS  
COMPLIANT  
Load Switching  
PA Switch  
Level Switch  
SOT-363  
SC-70 (6-LEADS)  
D
D
G
1
2
3
6
D
D
S
Marking Code  
5
4
BD XX  
Lot Traceability  
and Date Code  
Part # Code  
Top View  
Ordering Information: Si1417DH-T1  
Si1417DH-T1-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 sec  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 12  
8
V
VGS  
TA = 25 °C  
TA = 85 °C  
- 3.3  
- 2.4  
- 2.7  
- 1.9  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 8  
Continuous Diode Current (Diode Conduction)a  
- 1.4  
1.56  
0.81  
- 0.9  
1.0  
TA = 25 °C  
TA = 85 °C  
Maximum Power Dissipationa  
PD  
W
0.52  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
60  
Maximum  
Unit  
t 5 sec  
80  
125  
45  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
100  
34  
°C/W  
RthJF  
Notes:  
a. Surface Mounted on 1" x 1" FR4 Board.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 71879  
S-71197-Rev. B, 18-Jun-07  
www.vishay.com  
1

与SI1417DH-T1相关器件

型号 品牌 获取价格 描述 数据表
SI1417DH-T1-E3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.0027A I(D), 12V, 1-Element, P-Channel, Silicon, Me
SI1417EDH VISHAY

获取价格

P-Channel 12-V (D-S) MOSFET
SI1417EDH_08 VISHAY

获取价格

P-Channel 12-V (D-S) MOSFET
SI1417EDH-E3 VISHAY

获取价格

TRANSISTOR 2700 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN, FET General P
SI1417EDH-T1 VISHAY

获取价格

Transistor,
SI1419DH VISHAY

获取价格

P-Channel 200-V (D-S) MOSFET
SI1419DH_08 VISHAY

获取价格

P-Channel 200-V (D-S) MOSFET
SI1419DH-T1-E3 VISHAY

获取价格

P-Channel 200-V (D-S) MOSFET
SI1419DH-T1-GE3 VISHAY

获取价格

TRANSISTOR 300 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI1422DH VISHAY

获取价格

N-Channel 12 V (D-S) MOSFET