Datasheet > SI1414DH

SI1414DH

更新时间： 2024-09-11 09:26:15

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威世 - VISHAY		/
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描述
N-Channel 30 V (D-S) MOSFET

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SI1414DH 数据手册

New Product

Si1414DH

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^a

Definition

0.046 at V_GS= 4.5 V

0.050 at V_GS= 2.5 V

0.057 at V_GS= 1.8 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

5.7 nC

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converters

Boost Converters

Load Switches

SOT-363

SC-70 (6-LEADS)

Marking Code

AP XX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1414DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

4^a

T_F= 25 °C

T_F= 70 °C

T_A= 25 °C

T_A= 70 °C

4^a

4^{a, b, c}

3.7^{a, b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

2.3

Continuous Source-Drain Diode Current

1.3^{b, c}

2.8

_C= 70 °C

1.8

P_D

Maximum Power Dissipation

1.56^{b, c}

1.0^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

R_thJA

R_thJF

t  5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

Document Number: 67073

S10-2427-Rev. A, 25-Oct-10

www.vishay.com

12 3 4 5 6 7...12

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