Datasheet > SI1413EDH_08

SI1413EDH_08

更新时间： 2024-09-11 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	71K
描述
P-Channel 20-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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SI1413EDH_08 数据手册

Si1413EDH

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS: 1.8-V Rated

D ESD Protected: 3000 V

V_DS(V)

r_DS(on)(W)

I_D(A)

D Thermally Enhanced SC-70 Package

APPLICATIONS

0.115 @ V = –4.5 V

–2.9

–2.4

–2.0

–20

0.155 @ V = –2.5

D Load Switching

D PA Switch

0.220 @ V = –1.8

D Level Switch

SOT-363

SC-70 (6-LEADS)

Marking Code

BA XX

3 kW

Lot Traceability

and Date Code

Part # Code

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

"12

= 25_C

= 85_C

–2.3

–1.6

–2.9

–2.0

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–8

Continuous Diode Current (Diode Conduction)

–1.4

1.56

0.81

–0.9

1.0

= 25_C

= 85_C

Maximum Power Dissipation

0.52

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

100

125

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71396

S-03186—Rev. A, 05-Mar-01

www.vishay.com

12 3 4 5 6

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