Datasheet > RN2108MFV(TPL3)

RN2108MFV(TPL3)

更新时间： 2024-11-14 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	346K
描述
Digital Transistors 100mA -50volts 3Pin 22K x 47Kohms

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中文翻译

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技术参数
数据手册

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RN2108MFV(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.71
Base Number Matches：	1

RN2108MFV(TPL3) 数据手册

RN2107∼RN2109

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2107, RN2108, RN2109

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

z Built-in bias resistors

z Simplified circuit design

z Fewer parts and simplified manufacturing process

z Complementary to RN1107 to RN1109

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107

RN2108

RN2109

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2107 to 2109

Collector-emitter voltage

RN2107

RN2108

RN2109

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2107 to 2109

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Start of commercial production

1990-12

2014-03-01

12 3 4 5 6

中文翻译

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与RN2108MFV(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2109	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2109(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN2109(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN2109,LF(CT	TOSHIBA	获取价格	暂无描述
RN2109ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2109CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN2109F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109F(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2109F(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR