RN2109ACT

更新时间： 2024-09-26 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
6页	150K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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技术参数
数据手册

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RN2109ACT 技术参数

生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, R-PDSO-N3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.7
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.47	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.08 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	70
JESD-30 代码：	R-PDSO-N3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2109ACT 数据手册

RN2107ACT~RN2109ACT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2107ACT,RN2108ACT,RN2109ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

Top View

0.6±0.05

0.5±0.03

• Extra small package (CST3) is applicable for extra high density

fabrication.

• Incorporating a bias resistor into a transistor reduces parts count.

３

• Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

• Complementary to RN1107ACT to RN1109ACT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

1.BASE

2.EMITTER

3.COLLECOTR

Type No.

R1 (kΩ)

R2 (kΩ)

CST3

RN2107ACT

RN2108ACT

RN2109ACT

JEDEC

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2107ACT to RN2109ACT

Collector-emitter voltage

RN2107ACT

−6

Emitter-base voltage

RN2108ACT

RN2109ACT

−7

EBO

−15

Collector current

−80

°C

Collector power dissipation

Junction temperature

Storage temperature range

100*

150

RN2107ACT to RN2109ACT

stg

−55 to 150

°C

* : Mounted on FR4 board (10 mm × 10 mm × 1 mm)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2010-04-06

12 3 4 5 6

中文翻译

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与RN2109ACT相关器件

型号	品牌	获取价格	描述	数据表
RN2109CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2109CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN2109F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109F(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2109F(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2109F(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2109F(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2109FS	TOSHIBA	获取价格	暂无描述
RN2109FS(TPL3)	TOSHIBA	获取价格	Digital Transistors -50mA -20volts 3Pin 47K x 22Kohms
RN2109FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera

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