RN2109MFV

更新时间： 2024-11-11 03:36:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
6页	201K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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数据手册

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RN2109MFV 数据手册

RN2107MFV∼RN2109MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107MFV,RN2108MFV,RN2109MFV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

1.2±0.05

0.8±0.05

ꢀ

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

ꢀ

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1107MFV~RN1109MFV

Lead (Pb) - free

Equivalent Circuit and Bias Resistor Values

1. BASE

VESM

2. EMITTER

3. COLLECTOR

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107MFV

RN2108MFV

RN2109MFV

JEDEC

―

JEITA

―

2-1L1A

TOSHIBA

Weight: 0.0015 g (typ.)

Maximum Ratings

(Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

−50

CBO

CEO

RN2107MFV

~RN2109MFV

RN2107MFV

RN2108MFV

RN2109MFV

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note)

RN2107MFV

~RN2109MFV

150

stg

−55~150

°C

Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

0.5

0.45

1.15

0.4

0.45

0.4

2005-03-30

12 3 4 5 6

中文翻译

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