Datasheet > RN2109MFV(TPL3)

RN2109MFV(TPL3)

更新时间： 2024-01-07 06:12:41

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	346K
描述
Digital Transistors 100mA -50volts 3Pin 47K x 22Kohms

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技术参数
数据手册

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RN2109MFV(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.7
Base Number Matches：	1

RN2109MFV(TPL3) 数据手册

RN2107∼RN2109

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2107, RN2108, RN2109

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

z Built-in bias resistors

z Simplified circuit design

z Fewer parts and simplified manufacturing process

z Complementary to RN1107 to RN1109

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107

RN2108

RN2109

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2107 to 2109

Collector-emitter voltage

RN2107

RN2108

RN2109

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2107 to 2109

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Start of commercial production

1990-12

2014-03-01

12 3 4 5 6

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