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RN2110ACT(TL3SONY) PDF预览

RN2110ACT(TL3SONY)

更新时间： 2024-02-23 15:30:38
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
6页 370K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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中文翻译

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RN2110ACT(TL3SONY) 技术参数

生命周期：Obsolete包装说明：CHIP CARRIER, R-XBCC-N3
Reach Compliance Code：unknown风险等级：5.7
外壳连接：COLLECTOR最大集电极电流 (IC)：0.08 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：120JESD-30 代码：R-XBCC-N3
元件数量：1端子数量：3
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER极性/信道类型：PNP
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN2110ACT(TL3SONY) 数据手册

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RN2110ACT,RN2111ACT  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN2110ACT, RN2111ACT  
Switching Applications  
Unit: mm  
Inverter Circuit Applications  
Interface Circuit Applications  
0.6±0.05  
0.5±0.03  
Driver Circuit Applications  
•
•
Extra small package (CST3) is applicable for extra high density  
fabrication.  
３
Incorporating a bias resistor into a transistor reduces parts count.  
１
２
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
•
Complementary to RN1110ACT, RN1111ACT  
0.05±0.03  
0.35±0.02  
0.15±0.03  
Equivalent Circuit  
C
1.BASE  
2.EMITTER  
3.COLLECOTR  
CST3  
R1  
B
JEDEC  
JEITA  
―
―
E
TOSHIBA  
2-1J1A  
Absolute Maximum Ratings (Ta = 25°C)  
Weight: 0.75 mg (typ.)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
−5  
V
Collector current  
I
−80  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note)  
100  
C
T
150  
j
T
−55 to 150  
stg  
Note: Mounted on FR4 board (10 mm × 10 mm × 1 mmt)  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2004-08  
1
2014-10-21  
123456

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