Datasheet > RN2111MFV(TL3MAA)

RN2111MFV(TL3MAA)

更新时间： 2024-11-12 05:17:55

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	178K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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技术参数
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RN2111MFV(TL3MAA) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：	unknown	风险等级：	5.71
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2111MFV(TL3MAA) 数据手册

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RN2110MFV,RN2111MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2110MFV, RN2111MFV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit : mm

Ultra-small package, suited to very high density mounting

1.2±0.05

0.8±0.05

Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering

assembly cost.

A wide range of resistor values is available for use in various circuits.

Complementary to the RN1110MFV to RN1111MFV

Equivalent Circuit

1. BASE

VESM

2. EMITTER

3. COLLECTOR

Absolute Maximum Ratings (Ta = 25°C)

JEDEC

―

JEITA

Characteristic

Collector-base voltage

Symbol

Rating

Unit

2-1L1A

TOSHIBA

CBO

CEO

EBO

−50

Weight: 1.5 mg (typ.)

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note 1)

150

stg

−55 to 150

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Land Pattern Example

Unit:mm

0.5

0.45

1.15

0.4

0.45

0.4

Start of commercial production

2005-02

2014-03-01

12 3 4 5 6

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与RN2111MFV(TL3MAA)相关器件

型号	品牌	获取价格	描述	数据表
RN2111MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA -50volts 3Pin 10Kohms
RN2112	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2112ACT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2112CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2112F	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
RN2112FS(TPL3)	TOSHIBA	获取价格	Digital Transistors -50mA -20volts 3Pin 22Kohms
RN2112FT	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transi
RN2112MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2112MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA -50volts 3Pin 22Kohms
RN2113	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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