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RN2113FS(TPL3)

更新时间： 2024-02-01 21:01:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 94K
描述
Digital Transistors -50mA -20volts 3Pin 47Kohms

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中文翻译

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RN2113FS(TPL3) 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.71
Base Number Matches：1

RN2113FS(TPL3) 数据手册

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RN2112FS,RN2113FS  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)  
RN2112FS, RN2113FS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
•
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
•
Complementary to RN1112FS, RN1113FS  
1
Equivalent Circuit and Bias Resistor Values  
3
2
0.8±0.05  
1.0±0.05  
0.1±0.05  
C
R1  
B
0.1±0.05  
1.BASE  
2.EMITTER  
E
fSM  
3.COLLECOTR  
Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
JEITA  
―
―
Characteristics  
Collector-base voltage  
Symbol  
Rating  
−20  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
−20  
V
TOSHIBA  
2-1E1A  
−5  
V
Weight: 0.0006 g (typ.)  
Collector current  
I
−50  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
T
150  
j
T
−55~150  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Symbol  
Test Condition  
= −20 V, I = 0  
Min  
⎯
Typ.  
⎯
Max  
−100  
−100  
⎯
Unit  
nA  
I
V
V
V
CBO  
CB  
EB  
CE  
E
Emitter cut-off current  
I
= −5 V, I = 0  
⎯
⎯
nA  
EBO  
C
DC current gain  
h
= −5 V, I = −1 mA  
300  
⎯
⎯
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Collector output capacitance  
V
I
= −5 mA, I = −0.25 mA  
−0.15  
⎯
V
C
B
C
V
= −10 V, I = 0, f = 1 MHz  
⎯
1.2  
22  
47  
pF  
ob  
CB  
E
RN2112FS  
RN2113FS  
17.6  
37.6  
26.4  
56.4  
Input resistor  
R1  
⎯
kΩ  
1
2007-11-01  
12345

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