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RN2115(TE85LF) PDF预览

RN2115(TE85LF)

更新时间: 2024-02-29 14:48:13
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 179K
描述
Small Signal Bipolar Transistor

RN2115(TE85LF) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

RN2115(TE85LF) 数据手册

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RN2114RN2118  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN2114, RN2115, RN2116, RN2117, RN2118  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z
z
z
z
Built-in bias resistors  
Simplified circuit design  
Fewer parts and simplified manufacturing process  
Complementary to RN1107 to RN1109  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2114  
RN2115  
RN2116  
RN2117  
RN2118  
1
10  
10  
10  
4.7  
10  
2.2  
4.7  
10  
47  
JEDEC  
JEITA  
TOSHIBA  
22H1A  
Weight: 2.4mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2114 to 2118  
Collector-emitter voltage  
RN2114  
RN2115  
RN2116  
RN2117  
RN2118  
5  
6  
Emitter-base voltage  
V
V
7  
EBO  
15  
25  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2114 to 2118  
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1994-08  
1
2014-03-01  

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