Datasheet > RN2115(TE85LF)

RN2115(TE85LF)

更新时间： 2024-11-11 19:56:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	179K
描述
Small Signal Bipolar Transistor

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中文翻译

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技术参数
数据手册

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RN2115(TE85LF) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

RN2115(TE85LF) 数据手册

RN2114∼RN2118

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2114, RN2115, RN2116, RN2117, RN2118

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1107 to RN1109

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2114

RN2115

RN2116

RN2117

RN2118

4.7

2.2

4.7

JEDEC

JEITA

―

TOSHIBA

2−2H1A

Weight: 2.4mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2114 to 2118

Collector-emitter voltage

RN2114

RN2115

RN2116

RN2117

RN2118

−5

−6

Emitter-base voltage

−7

EBO

−15

−25

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2114 to 2118

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1994-08

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN2115(TE85LF)相关器件

型号	品牌	获取价格	描述	数据表
RN2115(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN2115FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN2115MFV	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2115MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2115MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors -50volts 100mA 3Pin 2.2Kohms x 10Kohms
RN2116	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2116(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN2116F	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ESM, 2-2HA1A, 3 PIN, BIP Genera
RN2116FT(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2116MFV	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver

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