RN2118FT(F)

更新时间： 2024-11-11 13:12:59

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号双极晶体管光电二极管驱动
页数	文件大小	规格书
8页	269K
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中文翻译

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数据手册

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RN2118FT(F) 数据手册

RN2114~RN2118

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2114,RN2115,RN2116

RN2117,RN2118

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1114~RN1118

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2114

RN2115

RN2116

RN2117

RN2118

4.7

2.2

4.7

JEDEC

―

EIAJ

2−2H1A

TOSHIBA

Weight: 2.4mg

Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2114~2118

Collector-emitter voltage

RN2114

RN2115

RN2116

RN2117

RN2118

−5

−6

Emitter-base voltage

−7

EBO

−15

−25

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2114~2118

150

−55~150

°C

stg

2001-06-07

12 3 4 5 6 7 8

中文翻译

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