RN2118MFV

更新时间： 2024-11-11 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体驱动器开关小信号双极晶体管光电二极管
页数	文件大小	规格书
8页	207K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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技术参数
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RN2118MFV 技术参数

生命周期：	Not Recommended	包装说明：	SMALL OUTLINE, R-PDSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.74
Is Samacsys：	N	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.21
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	50
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2118MFV 数据手册

RN2114MFV∼RN2118MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2114MFV,RN2115MFV,RN2116MFV

RN2117MFV,RN2118MFV

Unit: mm

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

1.2±0.05

0.8±0.05

Ultra-small package, suited to very high density mounting

Incorporating a bias resistor into the transistor reduces the number of parts,

so enabling the manufacture of ever more compact equipment and

lowering assembly cost.

z A wide range of resistor values is available for use in various circuits.

z Complementary to RN1114MFV to RN1118MFV

Equivalent Circuit and Bias Resistor Values

1.BASE

VESM

2.EMITTER

3.COLLECTOR

Type No.

R1 (kΩ)

R2 (kΩ)

RN2114MFV

RN2115MFV

RN2116MFV

RN2117MFV

RN2118MFV

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

RN2114MFV

RN2118MFV

−50

CBO

CEO

Collector-emitter voltage

RN2114MFV

RN2115MFV

RN2116MFV

RN2117MFV

RN2118MFV

−5

−6

Emitter-base voltage

−7

EBO

−15

−25

Collector current

−100

150

°C

RN2114MFV

RN2118MFV

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt )

2009-04-17

12 3 4 5 6 7 8

中文翻译

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与RN2118MFV相关器件

型号	品牌	获取价格	描述	数据表
RN2119FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN2119MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2119MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2119MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors Bias Resistor
RN212	ETC	获取价格	Current-compensated Chokes
RN212-0.4/02:	ETC	获取价格	DROSSEL NETZ PCB 39MH 0.4A
RN212-0.4-02-27M	Schaffner	获取价格	Current-compensated Chokes
RN212-0.4-02-39M	Schaffner	获取价格	Current-compensated Chokes
RN212-0.5/02	ETC	获取价格	CHOKE 27MH 0.5A
RN212-0.5-02-15M	Schaffner	获取价格	Current-compensated Chokes

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