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RN2119FV PDF预览

RN2119FV

更新时间: 2024-11-11 21:15:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 133K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal

RN2119FV 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

RN2119FV 数据手册

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RN2119FV  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2119FV  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit : mm  
Built-in bias resistors  
Simplified circuit design  
Reduced quantity of parts and manufacturing process  
Complementary to RN1119FV  
1.2±0.05  
0 8±0 05  
1
2
3
Equivalent Circuit  
1.BASE  
2.EMITTER  
3.COLLECTOR  
VESM  
JEDEC  
Maximum Ratings  
=
(Ta 25°C)  
JEITA  
Characteristic  
Symbol  
Rating  
Unit  
TOSHIBA  
2-1L1A  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
50  
50  
V
V
CBO  
CEO  
EBO  
Weight : 0.0015g (typ.)  
5  
V
I
100  
150  
mA  
mW  
°C  
°C  
0.5mm  
C
Collector power dissipation  
Junction temperature  
P (Note)  
C
0.45mm  
T
j
150  
0.45mm  
Storage temperature range  
T
55~150  
stg  
0.4mm  
Note: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
2004-06-28  
1

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