是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN2130MFV(TL3PAV) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
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RN2130MFV(TL3SONY) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
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RN2130MFV(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors -50volts 100mA 3Pin 100Kohmsx100Kohms |
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RN2131MFV | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver |
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RN2131MFV(TL3,T) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor |
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RN2131MFV(TL3PAV) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
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RN2131MFV,L3F(T | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
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RN2132MFV | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver |
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RN2132MFV(TL3,T) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor |
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RN2132MFV(TL3PAV) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
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