Datasheet > RN2130MFV(TPL3)

RN2130MFV(TPL3)

更新时间： 2024-01-05 23:07:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	163K
描述
Digital Transistors -50volts 100mA 3Pin 100Kohmsx100Kohms

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN2130MFV(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.75
Base Number Matches：	1

RN2130MFV(TPL3) 数据手册

RN2130MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2130MFV

Switching Applications

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

1.2±0.05

With built-in bias resistors

0.8±0.05

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1130MFV

Equivalent Circuit

1.BASE

2.EMITTER

3.COLLECTOR

VESM

JEDEC

―

JEITA

Absolute Maximum Ratings (Ta = 25°C)

2-1L1A

TOSHIBA

Weight : 1.5 mg (typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−10

Collector current

−100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note1)

150

stg

−55 to 150

Note1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Land Pattern Example

Unit: mm

0.5

0.45

1.15

0.4

0.45

Start of commercial production

0.4

2005-04

2014-03-01

12 3 4 5

中文翻译

下载PDF

与RN2130MFV(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2131MFV	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2131MFV(TL3,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2131MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2131MFV,L3F(T	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2132MFV	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2132MFV(TL3,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2132MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN214	ETC	获取价格	Current-compensated Chokes
RN214-0.3/02	ETC	获取价格	CHOKE 47MH 0.3A
RN214-0.3-02-47M	Schaffner	获取价格	Current-compensated Chokes