Datasheet > RN2132MFV(TL3,T)

RN2132MFV(TL3,T)

更新时间： 2024-11-11 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	173K
描述
Small Signal Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN2132MFV(TL3,T) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

RN2132MFV(TL3,T) 数据手册

RN2131MFV, RN2132MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2131MFV, RN2132MFV

Unit: mm

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

 Ultra-small package, suited to very high density mounting

 Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering assembly

cost.

 A wide range of resistor values is available for use in various circuits.

 Complementary to the RN1131MFV, RN1132MFV

Equivalent Circuit

1.BASE

2.EMITTER

VESM

3.COLLECTOR

JEDEC

JEITA

―

TOSHIBA

1-1Q1S

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

150

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note1 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Land Pattern Dimensions (for reference only)

Unit: mm

0.5

0.45

1.15

0.4

Start of commercial production

0.45

2005-04

0.4

Toshiba Electronic Devices & Storage Corporation

2019-01-10

12 3 4 5 6

中文翻译

下载PDF

与RN2132MFV(TL3,T)相关器件

型号	品牌	获取价格	描述	数据表
RN2132MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN214	ETC	获取价格	Current-compensated Chokes
RN214-0.3/02	ETC	获取价格	CHOKE 47MH 0.3A
RN214-0.3-02-47M	Schaffner	获取价格	Current-compensated Chokes
RN214-0.5/02	ETC	获取价格	CHOKE 39MH 0.5A
RN214-0.5-02-39M	Schaffner	获取价格	Current-compensated Chokes
RN214-0.5-02-56M	Schaffner	获取价格	Current-compensated Chokes
RN214-0.8/02	ETC	获取价格	CHOKE 27MH 0.8A
RN214-0.8-02-27M	Schaffner	获取价格	Current-compensated Chokes
RN214-1.2/02	ETC	获取价格	CHOKE 10MH 1.2A