Datasheet > RN2131MFV,L3F(T

RN2131MFV,L3F(T

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	166K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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技术参数
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RN2131MFV,L3F(T 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-F3	Reach Compliance Code：	unknown
风险等级：	5.74	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	120	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2131MFV,L3F(T 数据手册

RN2131MFV,RN2132MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2131MFV, RN2132MFV

Unit: mm

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

1.2±0.05

Driver Circuit Applications

0.8±0.05

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1131MFV, RN1132MFV

Equivalent Circuit

1: BASE

VESM

2: EMITTER

3: COLLECTOR

JEDEC

―

JEITA

2-1L1A

TOSHIBA

Absolute Maximum Ratings (Ta = 25°C)

Weight : 1.5 mg (typ.)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

Land Pattern Example

Unit : mm

0.5

0.45

1.15

0.4

0.45

Start of commercial production

0.4

2005-04

2014-03-01

12 3 4 5 6

中文翻译

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与RN2131MFV,L3F(T相关器件

型号	品牌	获取价格	描述	数据表
RN2132MFV	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2132MFV(TL3,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2132MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN214	ETC	获取价格	Current-compensated Chokes
RN214-0.3/02	ETC	获取价格	CHOKE 47MH 0.3A
RN214-0.3-02-47M	Schaffner	获取价格	Current-compensated Chokes
RN214-0.5/02	ETC	获取价格	CHOKE 39MH 0.5A
RN214-0.5-02-39M	Schaffner	获取价格	Current-compensated Chokes
RN214-0.5-02-56M	Schaffner	获取价格	Current-compensated Chokes
RN214-0.8/02	ETC	获取价格	CHOKE 27MH 0.8A

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