生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN2130MFV(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors -50volts 100mA 3Pin 100Kohmsx100Kohms |
![]() |
RN2131MFV | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver |
![]() |
RN2131MFV(TL3,T) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor |
![]() |
RN2131MFV(TL3PAV) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
![]() |
RN2131MFV,L3F(T | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
![]() |
RN2132MFV | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver |
![]() |
RN2132MFV(TL3,T) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor |
![]() |
RN2132MFV(TL3PAV) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |
![]() |
RN214 | ETC |
获取价格 |
Current-compensated Chokes |
![]() |
RN214-0.3/02 | ETC |
获取价格 |
CHOKE 47MH 0.3A |
![]() |