是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 2.24 |
认证: | UL; IEC; VDE; ENEC-10 | 滤波器类型: | SINGLE PHASE EMI FILTER |
高度: | 20 mm | 长度: | 18 mm |
安装类型: | THROUGH HOLE MOUNT | 工作频率: | 50/60Hz Hz |
最高工作温度: | 100 °C | 最低工作温度: | -40 °C |
物理尺寸: | L18.0XB12.5XH20.0 (mm)/L0.709XB0.492XH0.787 (inch) | 额定电流: | 2 A |
额定电压: | 300 V | 宽度: | 12.5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN212-2-02-1M8 | Schaffner |
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Current-compensated Chokes | |
RN212-3.6-02-0M4 | Schaffner |
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Current-compensated Chokes | |
RN212-4/02: | ETC |
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DROSSEL NETZ PCB 0.7MH 4.0A | |
RN212-4-02 | ETC |
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Current-compensated Chokes | |
RN212-4-02-0M7 | Schaffner |
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Current-compensated Chokes | |
RN2130FV | TOSHIBA |
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TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera | |
RN2130MFV | TOSHIBA |
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Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver | |
RN2130MFV(TL3PAV) | TOSHIBA |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
RN2130MFV(TL3SONY) | TOSHIBA |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
RN2130MFV(TPL3) | TOSHIBA |
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Digital Transistors -50volts 100mA 3Pin 100Kohmsx100Kohms |