Datasheet > RN2118(TE85L)

RN2118(TE85L)

更新时间： 2024-10-03 08:41:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	161K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal

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RN2118(TE85L) 数据手册

RN2114∼RN2118

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2114, RN2115, RN2116, RN2117, RN2118

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1107 ~ RN1109

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2114

RN2115

RN2116

RN2117

RN2118

4.7

2.2

4.7

JEDEC

―

JEITA

―

TOSHIBA

2−2H1A

Weight: 2.4mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2114~2118

Collector-emitter voltage

RN2114

RN2115

RN2116

RN2117

RN2118

−5

−6

Emitter-base voltage

−7

EBO

−15

−25

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2114~2118

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

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