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RN2115MFV(TL3PAV) PDF预览

RN2115MFV(TL3PAV)

更新时间： 2023-01-02 20:09:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
8页 201K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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RN2115MFV(TL3PAV) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.72
Is Samacsys：N其他特性：BUILT IN BIAS RESISTANCE RATIO IS 4.55
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：50
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

RN2115MFV(TL3PAV) 数据手册

 浏览型号RN2115MFV(TL3PAV)的Datasheet PDF文件第2页浏览型号RN2115MFV(TL3PAV)的Datasheet PDF文件第3页浏览型号RN2115MFV(TL3PAV)的Datasheet PDF文件第4页浏览型号RN2115MFV(TL3PAV)的Datasheet PDF文件第5页浏览型号RN2115MFV(TL3PAV)的Datasheet PDF文件第6页浏览型号RN2115MFV(TL3PAV)的Datasheet PDF文件第7页 
RN2114MFV∼RN2118MFV  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN2114MFV, RN2115MFV, RN2116MFV  
RN2117MFV, RN2118MFV  
Unit: mm  
Switching Applications  
Inverter Circuit Applications  
1.2±0.05  
0.8±0.05  
Interface Circuit Applications  
Driver Circuit Applications  
1
z
z
Ultra-small package, suited to very high density mounting  
2
3
Incorporating a bias resistor into the transistor reduces the number of parts,  
so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
z A wide range of resistor values is available for use in various circuits.  
z Complementary to RN1114MFV to RN1118MFV  
Equivalent Circuit and Bias Resistor Values  
1.BASE  
VESM  
2.EMITTER  
3.COLLECTOR  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2114MFV  
RN2115MFV  
RN2116MFV  
RN2117MFV  
RN2118MFV  
1
10  
10  
10  
4.7  
10  
2.2  
4.7  
10  
47  
JEDEC  
―
―
JEITA  
TOSHIBA  
2-1L1A  
Weight: 1.5 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
RN2114MFV  
to  
RN2118MFV  
V
V
−50  
−50  
V
V
CBO  
CEO  
Collector-emitter voltage  
RN2114MFV  
RN2115MFV  
RN2116MFV  
RN2117MFV  
RN2118MFV  
−5  
−6  
Emitter-base voltage  
V
V
−7  
EBO  
−15  
−25  
Collector current  
I
−100  
150  
mA  
mW  
°C  
C
RN2114MFV  
to  
RN2118MFV  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note1)  
C
T
j
150  
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt )  
Start of commercial production  
2005-09  
1
2014-03-01  
12345678

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RN2116MFV(TL3PAV) TOSHIBA

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 		Digital Transistors -50volts 100mA 3Pin 4.7Kohms x 10Kohms
RN2117 TOSHIBA

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RN2117(TE85R) TOSHIBA

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 		TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General

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