Datasheet > RN2113FT

RN2113FT

更新时间： 2024-11-10 22:23:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
3页	78K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

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中文翻译

获取价格

技术参数
数据手册

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RN2113FT 技术参数

生命周期：	Obsolete	包装说明：	2-1B1A, TESM, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.69	其他特性：	BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	Base Number Matches：	1

RN2113FT 数据手册

RN2112FT,RN2113FT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2112FT,RN2113FT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications.

Unit: mm

High-density mount is possible because of devices housed in very thin

TESM packages.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Wide range of resistor values are available to use in various circuit

designs.

Complementary to RN1112FT, RN1113FT

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

Weight:

Maximum Ratings (Ta = 25°C)

g (typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

-50

Collector-emitter voltage

Emitter-base voltage

-5

Collector current

-100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

150

-55~150

stg

2002-01-24

12 3

中文翻译

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