5秒后页面跳转
RN2112FS(TPL3) PDF预览

RN2112FS(TPL3)

更新时间: 2024-11-11 19:42:03
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 94K
描述
Digital Transistors -50mA -20volts 3Pin 22Kohms

RN2112FS(TPL3) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

RN2112FS(TPL3) 数据手册

 浏览型号RN2112FS(TPL3)的Datasheet PDF文件第2页浏览型号RN2112FS(TPL3)的Datasheet PDF文件第3页浏览型号RN2112FS(TPL3)的Datasheet PDF文件第4页浏览型号RN2112FS(TPL3)的Datasheet PDF文件第5页 
RN2112FS,RN2113FS  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)  
RN2112FS, RN2113FS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Complementary to RN1112FS, RN1113FS  
1
Equivalent Circuit and Bias Resistor Values  
3
2
0.8±0.05  
1.0±0.05  
0.1±0.05  
C
R1  
B
0.1±0.05  
1.BASE  
2.EMITTER  
E
fSM  
3.COLLECOTR  
Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
JEITA  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
20  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
20  
V
TOSHIBA  
2-1E1A  
5  
V
Weight: 0.0006 g (typ.)  
Collector current  
I
50  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
50  
C
T
150  
j
T
55~150  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Symbol  
Test Condition  
= −20 V, I = 0  
Min  
Typ.  
Max  
100  
100  
Unit  
nA  
I
V
V
V
CBO  
CB  
EB  
CE  
E
Emitter cut-off current  
I
= −5 V, I = 0  
nA  
EBO  
C
DC current gain  
h
= −5 V, I = −1 mA  
300  
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Collector output capacitance  
V
I
= −5 mA, I = −0.25 mA  
0.15  
V
C
B
C
V
= −10 V, I = 0, f = 1 MHz  
1.2  
22  
47  
pF  
ob  
CB  
E
RN2112FS  
RN2113FS  
17.6  
37.6  
26.4  
56.4  
Input resistor  
R1  
kΩ  
1
2007-11-01  

与RN2112FS(TPL3)相关器件

型号 品牌 获取价格 描述 数据表
RN2112FT TOSHIBA

获取价格

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transi
RN2112MFV TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2112MFV(TPL3) TOSHIBA

获取价格

Digital Transistors 100mA -50volts 3Pin 22Kohms
RN2113 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2113(TE85L) TOSHIBA

获取价格

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General
RN2113(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2113ACT TOSHIBA

获取价格

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2113ACT(TPL3) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SMT
RN2113CT TOSHIBA

获取价格

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2113F ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416