Datasheet > RN2110FV(TPL3)

RN2110FV(TPL3)

更新时间： 2024-01-14 23:06:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	291K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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RN2110FV(TPL3) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

RN2110FV(TPL3) 数据手册

RN2110FV,RN2111FV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2110FV, RN2111FV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit : mm

ꢀ

Built-in bias resistors

1.2±0.05

0.8±0.05

Simplified circuit design

Reduced quantity of parts and manufacturing process

Complementary to RN1110FV, RN1111FV

Equivalent Circuit

1.BASE

VESM

2.EMITTER

3.COLLECTOR

JEDEC

JEITA

―

Maximum Ratings

(Ta 25°C)

2-1L1A

TOSHIBA

Characteristic

Symbol

Rating

Unit

Weight: 0.0015g (typ.)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

CBO

CEO

EBO

0.5mm

−5

0.45mm

−100

150

°C

Collector power dissipation

Junction temperature

P (Note)

0.45mm

150

0.4mm

Storage τεµπερατυρε range

−55~150

stg

Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)

Electrical Characteristics

(Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

= −50V, I = 0

―

−100

400

−0.3

―

CBO

= −5V, I = 0

EBO

DC current gain

= −5V, I = −1mA

120

―

Collector-emitter saturation voltage

Transition frequency

= −5mA, I = −0.25mA

−0.1

200

CE (sat)

= −10V, I = −5mA

―

Collector output capacitance

= −10V, I = 0, f = 1MH

―

3.29

4.7

6.11

RN2110FV

Input resistor

―

kΩ

RN2111FV

2004-06-28

12 3 4 5

中文翻译

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