RN2111

更新时间： 2024-09-27 22:23:43

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
5页	157K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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数据手册

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RN2111 数据手册

RN2110,RN2111

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2110,RN2111

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1110, RN1111

Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

CBO

CEO

EBO

JEDEC

―

EIAJ

−5

TOSHIBA

Weight: 2.4mg

2−2H1A

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

150

−55~150

stg

Electrical Characteristics (Ta = 25°C)

Test

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Circuit

―

Collector cut-off current

Emitter cut-off current

= −50V, I = 0

―

−100

400

−0.3

―

CBO

―

= −5V, I = 0

EBO

DC current gain

―

= −5V, I = −1mA

120

―

Collector-emitter saturation voltage

Transition frequency

―ꢀ

―

= −5mA, I = −0.25mA

―ꢀ

―

−0.1

200

CE (sat)

= −10V, I = −5mA

Collector output capacitance

―

= −10V, I = 0, f = 1MH

―

3.29ꢀ

7ꢀ

4.7

6.11

RN2110

Input resistor

―ꢀ

―

kΩ

RN2111

2001-06-07

12 3 4 5

中文翻译

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