Datasheet > RN2110CT(TPL3)

RN2110CT(TPL3)

更新时间： 2024-01-18 17:37:14

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	163K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN2110CT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.05 A	最小直流电流增益 (hFE)：	300
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.05 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2110CT(TPL3) 数据手册

RN2110CT,RN2111CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2110CT, RN2111CT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

Interface Circuit Applications

0.5±0.03

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

Complementary to RN1110CT, RN1111CT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit

1.BASE

2.EMITTER

3.COLLECOTR

CST3

JEDEC

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−20

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−50

°C

Collector power dissipation

Junction temperature

Storage temperature range

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-10

2014-03-01

12 3 4 5 6

中文翻译

下载PDF

与RN2110CT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2110F	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
RN2110F(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2110F(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2110F(TPL3)	TOSHIBA	获取价格	RN2110F(TPL3)
RN2110FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN2110FV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP Genera
RN2110FV(TPL3)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2110MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2110MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2110MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 100mA -50volts 3Pin 4.7Kohms

与RN2110CT(TPL3)相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

2
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

3
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

5
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

3

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2110CT(TPL3)

RN2110CT(TPL3) 技术参数

RN2110CT(TPL3) 数据手册

与RN2110CT(TPL3)相关器件

与RN2110CT(TPL3)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2110CT(TPL3)

RN2110CT(TPL3) 技术参数

RN2110CT(TPL3) 数据手册

与RN2110CT(TPL3)相关器件

与RN2110CT(TPL3)相关文章

您还可以找

您在本页遇到什么问题？