Datasheet > RN2110F(TE85L,F)

RN2110F(TE85L,F)

更新时间： 2024-09-29 03:10:19

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
5页	268K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

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中文翻译

获取价格

技术参数
数据手册

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RN2110F(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	1
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2110F(TE85L,F) 数据手册

RN2110F,RN2111F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2110F,RN2111F

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit : mm

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1110F, RN1111F

Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

JEDEC

JEITA

―

−50

CBO

2−2HA1A

TOSHIBA

Collector-emitter voltage

Emitter-base voltage

CEO

Weight : 2.3mg (typ.)

−5

EBO

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5

中文翻译

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