RN2110ACT

更新时间： 2024-11-11 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关
页数	文件大小	规格书
6页	159K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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中文翻译

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数据手册

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RN2110ACT 数据手册

RN2110ACT,RN2111ACT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2110ACT,RN2111ACT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

Interface Circuit Applications

0.5±0.03

Driver Circuit Applications

３

•

Extra small package (CST3) is applicable for extra high density

fabrication.

１

２

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

0.05±0.03

0.35±0.02

•

Complementary to RN1110ACT, RN1111ACT

0.15±0.03

Equivalent Circuit

1.BASE

2.EMITTER

3.COLLECOTR

CST3

JEDEC

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−80

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note)

100

150

stg

−55 to 150

Note: Mounted on FR4 board (10 mm × 10 mm × 1 mmt)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-17

12 3 4 5 6

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