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RN2110(TE85R) PDF预览

RN2110(TE85R)

更新时间： 2024-02-26 16:36:56
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 239K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purpose Small Signal

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中文翻译

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RN2110(TE85R) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.7其他特性：BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：120
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

RN2110(TE85R) 数据手册

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RN2110,RN2111  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2110,RN2111  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z Built-in bias resistors  
z Simplified circuit design  
z Fewer parts and simplified manufacturing process  
z Complementary to RN1110, RN1111  
Equivalent Circuit  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
JEDEC  
―
―
Collector-emitter voltage  
Emitter-base voltage  
JEITA  
−5  
V
TOSHIBA  
2−2H1A  
Weight: 2.4 mg (typ.)  
Collector current  
I
−100  
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
T
150  
j
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
−100  
−100  
400  
−0.3  
―
nA  
nA  
―
V
CBO  
CB  
EB  
CE  
E
I
―
= −5 V, I = 0  
C
EBO  
DC current gain  
h
―
= −5 V, I = −1 mA  
120  
―
―
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= −5 mA, I = −0.25 mA  
−0.1  
200  
3
CE (sat)  
C
B
f
―
V
V
= −10 V, I = −5 mA  
―
MH  
z
T
CE  
C
Collector output capacitance  
C
―
= −10 V, I = 0, f = 1 MH  
―
6
pF  
ob  
CB  
E
z
3.29  
7
4.7  
10  
6.11  
13  
RN2110  
Input resistor  
R1  
―
―
kΩ  
RN2111  
1
2007-11-01  
12345

中文翻译

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