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RN2109MFV(TL3PAV) PDF预览

RN2109MFV(TL3PAV)

更新时间： 2024-11-11 21:10:59
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
6页 195K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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RN2109MFV(TL3PAV) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknown风险等级：5.7
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 0.47最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：70JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN2109MFV(TL3PAV) 数据手册

 浏览型号RN2109MFV(TL3PAV)的Datasheet PDF文件第2页浏览型号RN2109MFV(TL3PAV)的Datasheet PDF文件第3页浏览型号RN2109MFV(TL3PAV)的Datasheet PDF文件第4页浏览型号RN2109MFV(TL3PAV)的Datasheet PDF文件第5页浏览型号RN2109MFV(TL3PAV)的Datasheet PDF文件第6页 
RN2107MFV∼RN2109MFV  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN2107MFV, RN2108MFV, RN2109MFV  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z
z
Ultra-small package, suited to very high density mounting  
1.2±0.05  
0.8±0.05  
Incorporating a bias resistor into the transistor reduces the number of parts, so  
enabling the manufacture of ever more compact equipment and lowering  
assembly cost.  
1
2
z
z
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN1107MFV~RN1109MFV  
3
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2107MFV  
RN2108MFV  
RN2109MFV  
10  
22  
47  
47  
47  
22  
1. BASE  
VESM  
2. EMITTER  
3. COLLECTOR  
JEDEC  
JEITA  
―
―
2-1L1A  
TOSHIBA  
Absolute Maximum Ratings (Ta = 25°C)  
Weight: 0.0015 g (typ.)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2107MFV to  
RN2109MFV  
Collector-emitter voltage  
RN2107MFV  
RN2108MFV  
RN2109MFV  
−6  
Emitter-base voltage  
V
V
−7  
EBO  
−15  
Collector current  
I
−100  
150  
mA  
mW  
°C  
C
RN2107MFV  
to  
RN2109MFV  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
C
T
150  
j
T
stg  
−55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
0.5  
0.45  
1.15  
0.4  
0.45  
Start of commercial production  
2005-02  
0.4  
0.4  
1
2014-03-01  
123456

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