Datasheet > RN2109F(TPL3)

RN2109F(TPL3)

更新时间： 2024-11-12 07:33:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	326K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

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中文翻译

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数据手册

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RN2109F(TPL3) 数据手册

RN2107F∼RN2109F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107F,RN2108F,RN2109F

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1107F~RN1109F

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107F

RN2108F

RN2109F

JEDEC

JEITA

⎯

TOSHIBA

2-2HA1A

Weight: 2.3 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2107F

~RN2109F

Collector-emitter voltage

RN2107F

RN2108F

RN2109F

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2107F

~RN2109F

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6

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