RN2109FS

更新时间： 2024-09-26 13:12:59

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
6页	171K
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中文翻译

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数据手册

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RN2109FS 数据手册

RN2107~RN2109

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107,RN2108,RN2109

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1107~RN1109

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107

RN2108

RN2109

JEDEC

EIAJ

―

TOSHIBA

Weight: 2.4mg

2-2H1A

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2107~RN2109

Collector-emitter voltage

RN2107

RN2108

RN2109

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

*: Total rating

RN2107~RN2109

150

−55~150

°C

stg

2001-06-07

12 3 4 5 6

中文翻译

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