RN2109,LF(CT

更新时间： 2024-09-26 13:12:59

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
6页	171K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RN2109,LF(CT 数据手册

RN2107~RN2109

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2107,RN2108,RN2109

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1107~RN1109

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2107

RN2108

RN2109

JEDEC

EIAJ

―

TOSHIBA

Weight: 2.4mg

2-2H1A

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2107~RN2109

Collector-emitter voltage

RN2107

RN2108

RN2109

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

*: Total rating

RN2107~RN2109

150

−55~150

°C

stg

2001-06-07

12 3 4 5 6

中文翻译

下载PDF

与RN2109,LF(CT相关器件

型号	品牌	获取价格	描述	数据表
RN2109ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2109CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN2109F	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109F(F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2109F(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2109F(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2109F(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
RN2109FS	TOSHIBA	获取价格	暂无描述
RN2109FS(TPL3)	TOSHIBA	获取价格	Digital Transistors -50mA -20volts 3Pin 47K x 22Kohms