Datasheet > RN1108ACT(TPL3)

RN1108ACT(TPL3)

更新时间： 2024-11-02 21:12:07

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	173K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SMT

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中文翻译

获取价格

技术参数
数据手册

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RN1108ACT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83
最大集电极电流 (IC)：	0.08 A	最小直流电流增益 (hFE)：	80
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.1 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1108ACT(TPL3) 数据手册

RN1107ACT ~ RN1109ACT

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1107ACT, RN1108ACT, RN1109ACT

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

TOP View

0.6±0.05

•

Extra small package(CST3) is applicable for extra high density

fabrication.

0.5±0.03

Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

３

•

Complementary to RN2107ACT to RN2109ACT

１

２

0.05±0.03

0.35±0.02

Equivalent Circuit and Bias Resistor Values

0.15±0.03

Type No.

R1 (kΩ)

R2 (kΩ)

1: BASE

2: EMITTER

3: COLLECTOR

RN1107ACT

RN1108ACT

RN1109ACT

CST3

JEDEC

JEITA

―

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1107ACT to RN1109ACT

Collector-emitter voltage

RN1107ACT

Emitter-base voltage

RN1108ACT

RN1109ACT

EBO

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note1)

100

RN1107ACT to RN1109ACT

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)

Start of commercial production

2004-08

2014-03-01

12 3 4 5 6

中文翻译

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与RN1108ACT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN1108CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN1108CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN1108F	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
RN1108FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, FSM, 2-1E1A, 3 PIN, BIP General
RN1108FS(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SMT
RN1108FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, THIN, TESM, 2-1B1A, 3 PIN, BIP
RN1108MFV	TOSHIBA	获取价格	暂无描述
RN1108MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1109	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1109(T5L,F,T)	TOSHIBA	获取价格	Small Signal Bipolar Transistor

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