Datasheet > RN1109(TE85L,F)

RN1109(TE85L,F)

更新时间： 2024-02-03 23:57:32

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	339K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416

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技术参数
数据手册

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RN1109(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	70	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1109(TE85L,F) 数据手册

RN1107~1109

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1107, RN1108, RN1109

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and simplified manufacturing process

z Complementary to RN2107 to 2109

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1107

RN1108

RN1109

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

RN1107 to 1109

RN1107

CBO

CEO

Collector-emitter voltage

Emitter-base voltage

RN1108

EBO

RN1109

Collector current

RN1107 to 1109

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

100

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6

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